CN100498543C - Method for applying back-exposure to embedded phase-shifting mask focused ion beam etching - Google Patents
Method for applying back-exposure to embedded phase-shifting mask focused ion beam etching Download PDFInfo
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- CN100498543C CN100498543C CNB2006100236185A CN200610023618A CN100498543C CN 100498543 C CN100498543 C CN 100498543C CN B2006100236185 A CNB2006100236185 A CN B2006100236185A CN 200610023618 A CN200610023618 A CN 200610023618A CN 100498543 C CN100498543 C CN 100498543C
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Abstract
This invention provides one method to focus ion beam etching by use of imbed phase move mask mode, wherein, current process for MoSiOx mask imbed phase move mode is easy for pattern falling out problem which cannot be clear defined on quartz glass base materials outline and cannot be effectively removed by focus ion beam. This invention can accurately define deficiency area outline through negative resistant exposure to avoid above problems.
Description
Technical field
The present invention relates to the mask processing procedure that semicon industry is used for photoetching, relate in particular to the method that a kind of making has the embedded phase-shifting mask (EPSM) of molybdenum silicide type (MoSiOx) film.
Background technology
In the mask processing procedure of semiconductor fabrication process, in order to improve little shadow performance, the lasting demand of high-performance mask makes the everyway of mask manufacture process must revise and upgrade.In the present industry, the mask that is adopted mostly is traditional chromium class (chromium-baSed) dualistic formula mask greatly, embedded phase-shifting mask (the EPSM that perhaps has molybdenum silicide type (MoSiOx) film, Embedded Phase-ShiftingMask), the anti-phase principle of interference imaging of the phase place of The latter light wave, it is strong to possess the optical imagery contrast, the high advantage of the exposure depth of field.
For embedded phase-shifting mask, its main defective is that molybdenum silicide type (MoSiOx) film institute pie graph pattern characteristics is in edge and stretches out (protrusion) shape, if there is this defective, and the pattern that will can not get expecting when using mask exposure.As shown in Figure 1, can see the situation that pattern stretches out under optical microscope, digital 1 region is a base material quartz glass among the figure, and digital 2 regions are the pattern that molybdenum silicide type (MoSiOx) film constitutes, and the indicated zone of alphabetical d is defect area; Fig. 2 is the profile synoptic diagram of mask shown in Figure 1.Wherein molybdenum silicide type (MoSiOx) film from the pattern characteristics edge gradually unfertile land spread to quartz glass, form the shape on similar slope.If produce this defective, need usually to adopt focused ion beam (FIB) system earlier mask surface to be made scanning electron microscope image, remove molybdenum class (MoSiOx) film of defect area then with focused ion beam (FIB) etching according to the defect profile of being depicted.Can clearly tell the boundary profile of chromium film and base material quartz glass with scanning electron microscope, but, since molybdenum-silicon phase shift layer have with traditional chromium dualistic formula mask layer entirely different chemistry and physical property, the secondary ion analysis of focused ion beam manufacturing is difficult to accurate identification molybdenum-silicon oxide film and quartz glass, therefore for the embedded phase-shifting mask of molybdenum-silicon oxide film, under focused ion beam, can not obtain the defect profile of high-contrast, and scanning electron microscope image itself also can only obtain clear profile to the surface of the obvious difference of height of tool on the other hand, the residual film very thin to the edge can not obtain clear profile, Fig. 3 has shown the scanning electron microscope image that obtains with focused ion beam scanning mask surface, Fig. 4 has described the actual defects zone under the optical lens with white line on its basis, and can see between the focused ion beam etching area that defines and the actual defect area has bigger error.If the focused ion beam etching area with the scanning electron microscope definition exceeds actual defect area, ion beam can cause damage to quartz glass, and causes gallium to pollute; If with the focused ion beam etching area of the scanning electron microscope definition defect area less than reality, after handling with focused ion beam so, inevitable some defective still exists.
Because the characteristic of the board that industry adopted itself is limit, present mask processing procedure is when relating to the embedded phase-shifting mask of (MoSiOx) film that has molybdenum silicide type, and above-mentioned problem is inevitable.
Summary of the invention
At present when making has the embedded phase-shifting mask (EPSM) of molybdenum silicide type (MoSiOx) film, the defective that pattern stretches out appears easily, but because scanning electron microscope can not the profile of clear identification defect area on the quartz glass base material, and defective can not effectively be removed with focused ion beam, or damage glass baseplate when removing defective, at above problem, the present invention is proposed.
The objective of the invention is to, provide a kind of back-exposure is used for embedded phase-shifting mask (EPSM) focused ion beam etching method, this method is finished definition to the defect area profile by the mode of back-exposure, can avoid the problems referred to above that run at present fully.
Method provided by the invention comprises the following steps:
At first, the mask that will have molybdenum-Si oxide to stretch out the shape defective covers the negative photoresistance of one deck (PR PhotoResist), controls its thickness and is about
,, do not need homogeneity with very high specification control photoresist because only the defectiveness zone needs photoresist;
Then the mask that is coated with behind the negative photoresistance is carried out back-exposure, promptly expose from this side of quartz glass, in field of lithography, every kind of photoresistance all has the exposure light source of its special collocation (at Different Light, wavelength has 365nm/248nm/193nm), method of the present invention is suitable for above three kinds of light sources, can look measured result during actual the use and decide what to use.Because quartz glass can transmitted light, and defect area is light tight, the photoresist sclerosis that therefore is covered in after the exposure on the quartz glass is fixed thereon, and the photoresist that is covered on the defect area can be removed with clean-out system;
In said process, the cross section of considering the defect area that stretches out is gradually thin slope sample profile, and its edge may see through light because too approach, so the back-exposure process should be controlled to be short time and low dosage;
After exposing and cleaning, the photoresist that the quartz glass zone is capped thereon defines out, and the gallium that produces when being made it be difficult for being focused ion beam milling by the photoresist layer that is covered protection pollutes.The only remaining pattern characteristics zone and the defect area that expose on the mask, because scanning electron microscope is very sensitive for the high low head of sample surfaces, with board sample is carried out the focused ion beam vector scan and can clearly reflect profile with difference of height zone, and defect area and no matter be on the quartz glass photoresist layer or and the pattern characteristics zone bigger drop is all arranged, therefore in this case, can know exactly with scanning electron microscope defect area is distinguished, according to the defect profile that scanning electron microscope is determined, promptly can remove residual molybdenum-Si oxide that defect area stretches out shape with focused ion beam.
At last, sample is carried out simple photoresistance stripping process, can not stretched out the mask of defective.
The invention has the advantages that utilizing negative photoresistance back-exposure can also be the border of quartz glass and defect area according to the profile of the clear identification quartz glass of photoresistance base material, correspondingly, the profile of defect area just can clearly be defined.In addition, the present invention also has an advantage to be, owing to be to carry out the focused ion beam etching under the situation in sclerosis photoresistance protection quartz glass zone, produces the situation that gallium pollutes quartz glass when therefore not having the ion beam cutting.
For be more readily understood purpose of the present invention, feature with and advantage, below conjunction with figs. and embodiment are described in detail the present invention.
Description of drawings
The accompanying drawing that comprises among the application is a component part of instructions, and accompanying drawing and instructions and claims one are used from explanation flesh and blood of the present invention, are used for understanding better the present invention.
Fig. 1 is the observed mask surface image that has pattern to stretch out defective under the optical microscope, numeral 1 expression quartz glass base material among the figure, and the numeral 2 normal pattern that the expression molybdenum-silicon oxide film constitutes, alphabetical d represents the defect area residual film;
Fig. 2 is a mask profile synoptic diagram shown in Figure 1, and the direction arrow to the right in Fig. 1 has shown this profile position; Numeral 1 expression quartz glass base material among the figure, the numeral 2 normal pattern that the expression molybdenum-silicon oxide film constitutes, alphabetical d represents the defect area residual film, extends to the attenuation gradually of non-figure photic zone by normal pattern shading region, shows its side profile among the figure;
Fig. 3 has shown the scanning electron microscope image that obtains with focused ion beam scanning mask surface;
Fig. 4 has described the actual defects zone under the optical lens with white line on the basis of Fig. 3, can see between the focused ion beam etching area that defines and the actual defect area has bigger error;
Fig. 5～Fig. 8 is used for embedded phase-shifting mask (EPSM) focused ion beam etching method process synoptic diagram for provided by the invention with back-exposure, wherein numeral 1 is represented the quartz glass base material, numeral 2 expression molybdenum-silicon oxide films, alphabetical d represents defect area, the negative photoresistance of numeral 3 expressions:
Fig. 5 is according to the mask profile synoptic diagram behind the negative photoresistance of the inventive method covering;
Fig. 6 is the synoptic diagram that the mask behind the negative photoresistance of coating carries out back-exposure, and arrow is represented exposure directions among the figure;
Fig. 7 uses the FIB vector scan to define the synoptic diagram of defect profile after cleaning negative photoresistance, and arrow is represented the vector scan direction among the figure; With
The mask sample cross-section synoptic diagram of Fig. 8 for obtaining after handling according to the inventive method can see that the described shape defective of stretching out has been removed fully.
Embodiment
In order to understand technology of the present invention better, be described further below in conjunction with specific embodiments of the invention, but it does not limit the present invention.
Cover the negative photoresistance (PR of one deck having the mask sample surfaces that molybdenum-Si oxide stretches out the shape defective, Photo Resist), Fig. 5 is a mask profile synoptic diagram behind the negative photoresistance of covering, numeral 1 expression quartz glass base material among the figure, numeral 2 expression molybdenum-silicon oxide films, letter d represents defect area, and numeral 3 expression photoresist layers are controlled its thickness and are about
, owing to only defect area is exposed, this process does not need the homogeneity with very high specification control photoresist;
Use the long light of corresponding light wave arrestment that the mask that is coated with behind the negative photoresistance is carried out back-exposure then, promptly shine from this side of quartz glass, instrument can adopt for example Zeiss microscope.As shown in Figure 6, the direction of representing the light exposure among the figure with arrow, because quartz glass can transmitted light, and defect area is light tight, therefore the photoresistance of all flawless photic zones of exposure back on it will be by sensitization, the photoresist sclerosis that promptly is covered on the quartz glass is fixed thereon, and the photoresistance in all normal figures and the residual district of film will be isolated, not by sensitization.The cross section of considering the defect area that stretches out is gradually thin slope sample profile, and its edge may see through light because too approach, so the back-exposure process should be controlled to be short time and low dosage;
Control time and dosage can be realized by concrete instrument condition in the back-exposure process, when adopting above-mentioned Zeiss microscope, and can be in the following way:
1. select required light source kind (365/248/193nm wavelength)
2. control the size (promptly in order to shine the spot size of light shield) of transparent aperture
3. control the residence time of mask defect district under this hot spot irradiation
More than three combined factors rise and decided exposure dose, and exposure dose is directly proportional with the photoresistance sensitization degree that is exposed, be enough to allow the dosage of photoresistance sensitization of non-defective photic zone so can make up to find, and make above the defective and the photoresistance of normal figure top does not change by different condition.With the photoresistance clear-cut definition defect area after the development of defective intersection.If this trial is undesirable, only needs to clean to remove old photoresistance and apply photoresistance again and reattempt different condition and get final product, and whole processes irreversible damage can not take place to mask before not using the repairing of FIB vector scan.
Carry out development operation after the exposure, wash with cleaning fluid cleaning sample and with clean water, remove the photoresistance that does not have curing, the photoresist that is covered on the defect area is removed, in the FIB board, sample is carried out the profile that vector scan defines defect area, as shown in Figure 7, wherein arrow is represented the direction of vector scan;
According to the defect profile of depicting, defect area is carried out the focused ion beam etching, because normal photic zone can be covered by the photoresistance that sensitization stays after the development step before, when removing the molybdenum of defect area-Si oxide with ion beam, glass baseplate can not sustain damage, hardened photoresist after etching is finished on the lift off mask, the mode by wet-cleaned for example, adopt sulfuric acid and superoxol, perhaps, also can adopt dry type (plasma etching) the whole bag of tricks, not limit any mode that can effectively remove photoresist at this.The mask section that obtains at last as shown in Figure 8, the defective of stretching out of molybdenum silicide type (MoSiOx) the film figure feature that embedded phase-shifting mask is common has been removed fully.
Claims (9)
1, a kind of back-exposure is used for the embedded phase-shifting mask focused ion beam etching method, it is characterized in that comprising the following steps:
A) cover the negative photoresistance of one deck at the mask sample surfaces;
B) mask that is coated with behind the negative photoresistance is carried out back-exposure, promptly expose from this side of base material;
C) clean sample, remove the negative photoresistance that does not solidify, sample surfaces is carried out the focused ion beam vector scan, utilize the susceptibility of scanning electron microscope, define defect profile the high low head of sample surfaces;
D) according to the defect profile that defines, defect area is carried out the focused ion beam etching, molybdenum-Si oxide of defect area is removed, the hardened photoresist on the lift off mask obtains not having the pattern of defective.
2, the method for claim 1 is characterized in that the thickness that applies negative photoresistance in the step a) is about
3, the method for claim 1 is characterized in that the optical wavelength range that back-exposure adopts in the step b) comprises: 193nm, 248nm, 365nm.
4, method as claimed in claim 2 is characterized in that the optical wavelength range that back-exposure adopts in the step b) comprises: 193nm, 248nm, 365nm.
5, method as claimed in claim 3 is characterized in that short duration of back-exposure process control and low exposure dose in the step b).
6, method as claimed in claim 4 is characterized in that short duration of back-exposure process control and low exposure dose in the step b).
7, the method for claim 1 is characterized in that the method that the cleaning sample adopts in the step c) is that wet developing washes with clean water again.
8, as the described method of one of claim 1 to 7, the method that it is characterized in that the hardened photoresist on the lift off mask in the step d) is to carry out surface oxidation with sulfuric acid+superoxol earlier to carry out surface corrosion with ammoniacal liquor again.
9, as the described method of one of claim 1 to 7, the method that it is characterized in that the hardened photoresist on the lift off mask in the step d) is a dry etching method, comprises plasma etching, ashing.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100236185A CN100498543C (en) | 2006-01-25 | 2006-01-25 | Method for applying back-exposure to embedded phase-shifting mask focused ion beam etching |
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| CNB2006100236185A CN100498543C (en) | 2006-01-25 | 2006-01-25 | Method for applying back-exposure to embedded phase-shifting mask focused ion beam etching |
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| CN101008787A CN101008787A (en) | 2007-08-01 |
| CN100498543C true CN100498543C (en) | 2009-06-10 |
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| JP6660023B2 (en) * | 2014-11-19 | 2020-03-04 | 日産化学株式会社 | Silicon-containing resist underlayer film forming composition capable of wet removal |
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Effective date of registration: 20111129 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Granted publication date: 20090610 Termination date: 20190125 |