CN103456319A - Self-assembly magnetic memorizer and forming method thereof - Google Patents
Self-assembly magnetic memorizer and forming method thereof Download PDFInfo
- Publication number
- CN103456319A CN103456319A CN2013103019306A CN201310301930A CN103456319A CN 103456319 A CN103456319 A CN 103456319A CN 2013103019306 A CN2013103019306 A CN 2013103019306A CN 201310301930 A CN201310301930 A CN 201310301930A CN 103456319 A CN103456319 A CN 103456319A
- Authority
- CN
- China
- Prior art keywords
- memory body
- magnetic storage
- self assembly
- storage memory
- silica nanosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001338 self-assembly Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 81
- 238000003860 storage Methods 0.000 claims abstract description 48
- 239000002077 nanosphere Substances 0.000 claims abstract description 41
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 39
- OBACEDMBGYVZMP-UHFFFAOYSA-N iron platinum Chemical compound [Fe].[Fe].[Pt] OBACEDMBGYVZMP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 230000005381 magnetic domain Effects 0.000 claims abstract description 22
- 239000011159 matrix material Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 230000007062 hydrolysis Effects 0.000 claims description 3
- 238000006460 hydrolysis reaction Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 230000001808 coupling effect Effects 0.000 abstract description 6
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 238000005459 micromachining Methods 0.000 abstract 1
- 230000005415 magnetization Effects 0.000 description 8
- 239000002096 quantum dot Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000003491 array Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910000640 Fe alloy Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Abstract
The invention provides a self-assembly magnetic memorizer which comprises a memorizer body. The memorizer body comprises a disc-shaped hard disk substrate, a plurality of annular rail grooves are formed in the hard disk substrate by taking the circle center of the hard disk substrate as the center, a silicon dioxide nanosphere array is arranged in the rail grooves, the surfaces, in contact with the air, of silicon dioxide nanospheres are provided with iron platinum thin films, and an iron platinum dot matrix is formed. A forming method of the self-assembly magnetic memorizer comprises the steps that the annular rail grooves are etched in the hard disk substrate with the photoetching technique; the silicon dioxide nanosphere array is prepared in the rail grooves in a nanometer self-assembly micromachining way; the iron platinum thin films are grown on the silicon dioxide nanospheres, and the regular iron platinum dot matrix is formed. The self-assembly magnetic memorizer lowers the coupling effect of magnetic domains to the maximum degree, meets the requirement for high magnetic recording density, and has environmental stability at the same time. The forming method of the self-assembly magnetic memorizer overcomes physical defects of traditional continuous magnetic storage media.
Description
Technical field
The present invention relates to the super-high density magnetic technical field of memory, relate in particular to the vertical magnetic storage of a kind of high density, the self assembly magnetic storage memory body of high density discrete media storage, and the formation method of the self assembly magnetic storage memory body of ultrahigh vacuum magnetic material evaporation coating technique and nano-dot matrix self assembly processing.
Background technology
Information operating in computing machine is based upon on the scale-of-two basis.This is reflected on fundamental aspect is two kinds of different magnetic domain direction of magnetization in computer disk, respectively corresponding " 0 " and " 1 ".Since computing machine comes out, magnetic recording just is faced with under the prerequisite that guarantees storage stability always, constantly promotes the problem of storage density.In disk, the zone of each piece uniform magnetization is called a magnetic domain, a corresponding byte.Therefore, the size of domain size has just directly determined the storage density of disk.Generally the Magnetographic Technology density of application is about 100Gb/inch2 in the market, the corresponding about 100nm of magnetic domain characteristic dimension.
From physical layer, the coupling effect between adjacent magnetic domain is the theoretical bottleneck that restriction magnetic storage density further improves.Also, when the magnetic domain that represents two different scale-of-two bytes is mutually close, can produces stronger electromagnetic interference (EMI) to each other, thereby signal is upset.
From return to zero, distinguish, magnetic storage instantly can be divided into two kinds of perpendicular recording and parallel records.In perpendicular magnetic recording, the direction of magnetization of magnetic domain vertically is arranged on the disk plane, has avoided the relative situation of magnetic pole between adjacent magnetic domain, and coupling effect is low than Parallel magnetic recording.
From magnetic recording media, distinguish, magnetic storage can be divided into again the continuous medium record and discrete media records two kinds.The discrete media record uses the micro-manufacturing process of nanometer that each magnetic domain of memory carrier is carried out to physical segmentation, thereby has effectively reduced coupling effect, is the important development direction of following magnetic storage.
Except the necessary spacing between magnetic domain, the size of each magnetic domain self is also to restrict the another physics bottleneck that magnetic storage density further promotes.Be also, the stability of magnetic domain direction of magnetization exists a quantum physics limit---the superparamagnetic limit, when magnetic anisotropy energy Ea corresponding to each magnetic domain is reduced to while comparing with thermal excitation energy KBT (wherein, KB represents Boltzmann constant, the T representation temperature), the magnetic domain direction of magnetization will be overturn because of thermal perturbation, causes the loss of the information of storing.Magnetic anisotropy can be determined by Ea=KuV (wherein, Ku represents magnetic anisotropic constant, and V represents the magnetic domain volume), reduces with the reduction of domain size, thereby approaches the superparamagnetic limit.Therefore, in the pursuit to the high density storage, people need to, from material character, find and possess high magnetic anisotropy constant Ku storage medium.
Summary of the invention
The object of the present invention is to provide the vertical magnetic storage of a kind of high density, the self assembly magnetic storage memory body of high density discrete media storage, and the formation method of the self assembly magnetic storage memory body of ultrahigh vacuum magnetic material evaporation coating technique and nano-dot matrix self assembly processing.
To achieve these goals, self assembly magnetic storage memory body provided by the invention, comprise: the memory body body, the memory body body comprises disc hard disk substrate, centered by hard disk substrate one its center of circle, be provided with some circular orbit grooves, be provided with the silica nanosphere array in orbital groove, the surface of silica nanosphere ingress of air is provided with the iron platinum film, forms the nanometer Fe-Pt dot matrix.
In some embodiments, on the silica nanosphere surface, it forms continuous variation in thickness with latitudinal gradient to the iron platinum film, at silica nanosphere edge thickness, is reduced to zero, has naturally isolated the magnetic coupling association between the adjacent silicon dioxide nanosphere.
In some embodiments, the diameter of silica nanosphere is 20nm-50nm.
In some embodiments, the thickness of iron platinum film peak is 10nm.
In some embodiments, the integral multiple that the width of orbital groove is the silica nanosphere diameter.
In some embodiments, each nanometer Fe-Pt dot matrix forms a single magnetic domain, a corresponding independent scale-of-two byte.
The formation method of self assembly magnetic storage memory body comprises the following steps:
S1: adopt photoetching technique, etching the circular orbit groove on the hard disk substrate;
S2: by the micro-manufacturing process of nanoassemble, prepare the silica nanosphere array in orbital groove;
S3: the iron platinum film is grown on silica nanosphere to the nanometer Fe-Pt dot matrix of formation rule.
In some embodiments, silica nanosphere passed through hydrolysis and the natural subsidence generation of tetraethoxysilane.
In some embodiments, in step S2, the generating mode of iron platinum film is: under UHV condition, the iron platinum film is grown on silica nanosphere by the normal vertically electron beam evaporation plating of angle.
Self assembly magnetic storage memory body of the present invention has the following advantages:
1. self assembly magnetic storage memory body of the present invention, integrated the double dominant that perpendicular recording and discrete media are stored, and reduced to greatest extent the coupling effect between magnetic domain; Simultaneously, or few in number ideal materials that possesses high magnetic anisotropy constant Ku.Iron platinum magnetic storage memory body is manufactured to the nano-dot matrix with periodic structure, and in array, each nano dot forms discrete single magnetic domain, stores the information of a scale-of-two byte.Related science research shows, such nanometer Fe-Pt dot matrix have perpendicular magnetization characteristic, can be used as the perpendicular recording carrier.In addition, the iron alloy platinum material has high magnetic anisotropy constant 7 * 107ergs/cm3, and, not containing rare earth element, has the superiority of environmental stability concurrently when meeting high magnetic recording density condition.
2. the formation method of self assembly magnetic storage memory body of the present invention, high magnetic anisotropy constant and the perpendicular magnetization character of iron alloy platinum material of take is basis, proposes the design and manufacture scheme of discrete nano-dot matrix, breaks through the tradition physics bottleneck of magnetic storage medium continuously.
The accompanying drawing explanation
The structural representation of the self assembly magnetic storage memory body that Fig. 1 is one embodiment of the present invention;
The structural representation that Fig. 2 is nanometer Fe-Pt dot matrix in the self assembly magnetic storage memory body shown in Fig. 1.
Embodiment
Explanation that the present invention is described in further detail below in conjunction with drawings and the specific embodiments.
Obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making under the creative work prerequisite the every other embodiment obtained, belong to the scope of protection of the invention.
Fig. 1 to Fig. 2 has schematically shown self assembly magnetic storage memory body according to one embodiment of the present invention and forming method thereof.
As shown in Figure 1, self assembly magnetic storage memory body of the present invention, comprise memory body body 1, memory body body 1 comprises disc hard disk substrate 101, centered by hard disk substrate 101 1 its centers of circle, be provided with some circular orbit grooves 1011, be provided with silica nanosphere 1012 arrays in orbital groove 1011.
The integral multiple that the width of orbital groove 1011 is silica nanosphere 1012 diameters, the self assembly that restricts thus silica nanosphere 1012 is arranged, and makes its regular being distributed in imperfectly in orbital groove 1011.In this embodiment of the present invention, the diameter of silica nanosphere 1012 is 50nm, the silica nanosphere 1012 that is 50nm for characteristic dimension, the width of designed path groove 1011 is 0.5um, therefore, just can deposit 10 silica nanospheres 1012 along the hard disk radial direction in every orbital groove 1011.
The surface of silica nanosphere 1012 ingresss of air is provided with iron platinum film 1201, forms the nanometer Fe-Pt dot matrix.On silica nanosphere 1012 surfaces, it forms continuous variation in thickness with latitudinal gradient to iron platinum film 1201, at silica nanosphere 1012 edge's thickness, is reduced to zero, has naturally isolated the magnetic coupling association between adjacent silicon dioxide nanosphere 1012.In this embodiment of the present invention, the thickness of iron platinum film 1201 peaks is 10nm.
To sum up, self assembly magnetic storage memory body of the present invention.Each nanometer Fe-Pt dot matrix forms a single magnetic domain, a corresponding independent scale-of-two byte.
The formation method of self assembly magnetic storage memory body, from technological layer, can realize by the micro-manufacturing process of nanoassemble, comprises the following steps:
S1: adopt photoetching technique, etching circular orbit groove 1011 on hard disk substrate 101;
S2: by the micro-manufacturing process of nanoassemble, at interior silica nanosphere 1012 arrays that prepare of orbital groove 1011;
Its concrete grammar is: by the hydrolysis of mistake tetraethoxysilane and amorphous silica nanosphere 1012 arrays of natural subsidence create-rule on hard disk substrate 101, chemical reaction is as follows:
28% ammoniacal liquor of the tetraethoxysilane that its proportioning is 12ml, the distilled water of 30ml, 7.8ml and the ethanol of 150ml.By this reaction solution with the dilution proportion of 1:50 in straight alcohol, natural subsidence can obtain regularly arranged silica nanosphere 1012 arrays on glass hard disk substrate 101, and the diameter error of silica nanosphere 1012 is within 5%.
S3: iron platinum film 1201 is grown on silica nanosphere 1012 to the nanometer Fe-Pt dot matrix of formation rule.
Its concrete grammar is: under UHV condition, by the normal vertically electron beam evaporation plating of angle, one deck iron platinum film 1201 is grown on silica nanosphere 1012.Using the nanometer Fe-Pt dot matrix as storage medium, and when single nanosphere diameter wherein is reduced to 20nm, the magnetic storage density reachable is to 1Tb/inch
2.
Utilize the self assembly magnetic storage memory body of the formation method generation of self assembly magnetic storage memory body of the present invention, not only integrated the double dominant of perpendicular recording and discrete media storage, reduced to greatest extent the coupling effect between magnetic domain; Simultaneously, or few in number ideal materials that possesses high magnetic anisotropy constant Ku.Iron platinum magnetic storage memory body is manufactured to the nano-dot matrix with periodic structure, and in array, each nano dot forms discrete single magnetic domain, stores the information of a scale-of-two byte.Related science research shows, such nanometer Fe-Pt dot matrix have perpendicular magnetization characteristic, can be used as the perpendicular recording carrier.In addition, the iron alloy platinum material has high magnetic anisotropy constant 7 * 107ergs/cm3, and, not containing rare earth element, has the superiority of environmental stability concurrently when meeting high magnetic recording density condition.
Claims (9)
1. self assembly magnetic storage memory body, it is characterized in that, comprise memory body body (1), described memory body body (1) comprises disc hard disk substrate (101), centered by described hard disk substrate (101) one its centers of circle, be provided with some circular orbit grooves (1011), be provided with silica nanosphere (1012) array in described orbital groove (1011), the surface of described silica nanosphere (1012) ingress of air is provided with iron platinum film (1201), forms the nanometer Fe-Pt dot matrix.
2. self assembly magnetic storage memory body according to claim 1, it is characterized in that, on described silica nanosphere (1012) surface, it forms continuous variation in thickness with latitudinal gradient to described iron platinum film (1201), be reduced to zero at described silica nanosphere (1012) edge thickness, naturally isolated the magnetic coupling association between adjacent silicon dioxide nanosphere (1012).
3. self assembly magnetic storage memory body according to claim 2, is characterized in that, the diameter of described silica nanosphere (1012) is 20nm-50nm.
4. self assembly magnetic storage memory body according to claim 2, is characterized in that, the thickness of described iron platinum film (1201) peak is 10nm.
5. according to arbitrary described self assembly magnetic storage memory body in claim 1 to 4, it is characterized in that the integral multiple that the width of described orbital groove (1011) is described silica nanosphere (1012) diameter.
6. self assembly magnetic storage memory body according to claim 5, is characterized in that, each described nanometer Fe-Pt dot matrix forms a single magnetic domain, a corresponding independent scale-of-two byte.
7. the formation method of self assembly magnetic storage memory body, is characterized in that, comprises the following steps:
S1: adopt photoetching technique, etching circular orbit groove (1011) on hard disk substrate (101);
S2: by the micro-manufacturing process of nanoassemble, prepare silica nanosphere (1012) array in orbital groove (1011);
S3: iron platinum film (1201) is grown in to described silica nanosphere (1012) upper, the nanometer Fe-Pt dot matrix of formation rule.
8. the formation method of self assembly magnetic storage memory body according to claim 7, is characterized in that, hydrolysis and natural subsidence that described silica nanosphere (1012) passed through tetraethoxysilane (Si (OC2H5) 4) generate.
9. the formation method of self assembly magnetic storage memory body according to claim 7, it is characterized in that, in described step S2, the generating mode of iron platinum film (1201) is: under UHV condition, iron platinum film (1201) is grown on silica nanosphere (1012) by the normal vertically electron beam evaporation plating of angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310301930.6A CN103456319B (en) | 2013-07-18 | 2013-07-18 | Self-assembly magnetic memorizer and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310301930.6A CN103456319B (en) | 2013-07-18 | 2013-07-18 | Self-assembly magnetic memorizer and forming method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103456319A true CN103456319A (en) | 2013-12-18 |
| CN103456319B CN103456319B (en) | 2014-12-31 |
Family
ID=49738613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310301930.6A Active CN103456319B (en) | 2013-07-18 | 2013-07-18 | Self-assembly magnetic memorizer and forming method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103456319B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110111820A (en) * | 2019-04-02 | 2019-08-09 | 惠科股份有限公司 | Disc sheet and preparation method thereof and Magnetic memory body memory part |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020136927A1 (en) * | 2001-03-22 | 2002-09-26 | Hiroyuki Hieda | Recording medium, method of manufacturing recording medium and recording apparatus |
| US7041394B2 (en) * | 2001-03-15 | 2006-05-09 | Seagate Technology Llc | Magnetic recording media having self organized magnetic arrays |
| CN101100000A (en) * | 2007-06-05 | 2008-01-09 | 暨南大学 | Core-shell structure composite nanometer material and preparation method thereof |
| CN102543107A (en) * | 2010-12-07 | 2012-07-04 | 吉林师范大学 | Manufacture method of nano point array with perpendicular magnetic anisotropy |
-
2013
- 2013-07-18 CN CN201310301930.6A patent/CN103456319B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7041394B2 (en) * | 2001-03-15 | 2006-05-09 | Seagate Technology Llc | Magnetic recording media having self organized magnetic arrays |
| US20020136927A1 (en) * | 2001-03-22 | 2002-09-26 | Hiroyuki Hieda | Recording medium, method of manufacturing recording medium and recording apparatus |
| CN101100000A (en) * | 2007-06-05 | 2008-01-09 | 暨南大学 | Core-shell structure composite nanometer material and preparation method thereof |
| CN102543107A (en) * | 2010-12-07 | 2012-07-04 | 吉林师范大学 | Manufacture method of nano point array with perpendicular magnetic anisotropy |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110111820A (en) * | 2019-04-02 | 2019-08-09 | 惠科股份有限公司 | Disc sheet and preparation method thereof and Magnetic memory body memory part |
| CN110111820B (en) * | 2019-04-02 | 2021-07-23 | 惠科股份有限公司 | Magnetic disk and its making method and magnetic memory storage device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103456319B (en) | 2014-12-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5103712B2 (en) | Method for producing nanohole structure | |
| Richter et al. | Recording potential of bit-patterned media | |
| CN100377218C (en) | Magnetic recording medium and magnetic recording apparatus | |
| US7662491B2 (en) | Method of manufacturing nano-template for a high-density patterned medium and high-density magnetic storage medium using the same | |
| JP2006075942A (en) | Laminated layer structural body, magnetic recording medium and manufacturing method for this medium, apparatus and method for magnetic recording, and device using this laminated layer structural body | |
| CN100555418C (en) | Perpendicular magnetic recording medium and manufacture method thereof | |
| CN100351906C (en) | Vertical magnetic recording medium | |
| JP2008293559A (en) | Magnetic recording medium and magnetic recording system | |
| JP2006318607A (en) | Magnetic recording medium, its manufacturing method and magnetic recording apparatus | |
| JP2011522344A (en) | Magnetic recording medium | |
| JP4946500B2 (en) | Nanohole structure and manufacturing method thereof, and magnetic recording medium and manufacturing method thereof | |
| CN103456319B (en) | Self-assembly magnetic memorizer and forming method thereof | |
| CN203552697U (en) | Self-assembling magnetic storage memory | |
| CN101515459A (en) | Patterned magnetic recording medium and method for manufacturing same | |
| US9177598B2 (en) | Device, method of fabricating a media and method of servo writing | |
| JP2005327368A (en) | Protective layer for magnetic recording apparatus, magnetic head, and magnetic recording apparatus | |
| JPWO2004061829A1 (en) | Perpendicular magnetic recording medium | |
| US7886423B2 (en) | Slider with micro-texture and method for forming the same | |
| JP4878168B2 (en) | Nanohole structure and manufacturing method thereof, and magnetic recording medium and manufacturing method thereof | |
| US20100220411A1 (en) | Information recording media, method of manufacturing the information recording media, read/write head, and method of manufacturing the read/write head | |
| JP2009223989A (en) | Nano-hole structure and magnetic recording medium | |
| CN101814295A (en) | Electric field auxiliary magnetic memory device and manufacture method thereof | |
| Gulyaev et al. | Advanced inorganic materials for hard magnetic media | |
| WO2004099470A1 (en) | Porous alumina film and its forming method, magnetic recording medium, and magnetic storage device | |
| Gavrila et al. | Magnetic materials for advanced magnetic recording media |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: Xinghu Avenue Development Zone 226000 Jiangsu city of Nantong province No. 1692 light electrical Park 10 East building bottom Applicant after: JIANGSU HINANO PRECISION ASSEMBLY Co.,Ltd. Address before: 226000 Jiangsu city of Nantong Province Economic and Technological Development Zone Tongsheng Road No. 188 B block 4 layer Applicant before: HINANO PRECISION ASSEMBLY & NANO MATERIALS Co.,Ltd. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: JIANGSU HINANO PRECISION ASSEMBLY + NANO MATERIALS CO., LTD. TO: JIANGSU HINANO PRECISION EQUIPMENT CO., LTD. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180314 Address after: Tongsheng Road Development Zone 226010 Jiangsu city of Nantong province No. 188 block B Room 405 Patentee after: JIANGSU AIRUITE ECOLOGICAL TECHNOLOGY CO.,LTD. Address before: Xinghu Avenue Nantong Development Zone 226000 Jiangsu province No. 1692 light mechanical and electrical Park 10 building on the eastern side of the bottom Patentee before: JIANGSU HINANO PRECISION ASSEMBLY Co.,Ltd. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20220812 Address after: 226400 a203-2, Haixin building, No. 111, Huanghe Road, Rudong County, Nantong City, Jiangsu Province Patentee after: Nantong Huanan Intelligent Technology Co.,Ltd. Address before: 226010 Room 405, block B, 188 Tong Sheng Road, Nantong Development Zone, Jiangsu. Patentee before: JIANGSU AIRUITE ECOLOGICAL TECHNOLOGY CO.,LTD. |
|
| TR01 | Transfer of patent right |